Download Circuit Design on Plastic Foils by Daniele Raiteri, Eugenio Cantatore, Arthur van Roermund PDF

By Daniele Raiteri, Eugenio Cantatore, Arthur van Roermund

This e-book illustrates various circuit designs on plastic foils and gives all of the details had to adopt profitable designs in large-area electronics. The authors display architectural, circuit, format, and gadget strategies and clarify the explanations and the inventive method in the back of each one. Readers will continue lower than regulate large-area applied sciences and accomplish powerful, trustworthy circuit designs which could face the demanding situations imposed by way of inexpensive low-temperature high-throughput manufacturing.

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Additional info for Circuit Design on Plastic Foils

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The dual-gate enhanced logic style [31] was indeed used to fabricate the first organic microprocessor [32], counting more than 3000 transistors on the same foil. This approach exploits the second gate to control the threshold 22 3 State of the Art in Circuit Design voltage of the pull-up network. Unfortunately the second gate has a weak influence on that parameter. Therefore, voltages even higher than three times the supply (typically 20 V) are required. In the next chapter, this very same double gate technology will be described more in detail, as it will be used extensively for analog, digital and mixed-signal designs in this work.

Then the discrete-time analog signal can be fed to the quantizer which converts the analog sample into a digital word. 2 Data Conversion The design of data converters represents a delicate topic in any manufacturing technology due to their mixed-signal nature. Indeed this kind of circuits links different signal domains, converting a continuous-time and continuous-amplitude signal into a discrete-time quantized digital word (analog to digital converter—ADC), or vice versa (digital to analog converter—DAC).

2 Dynamic Behavior The characterization of the technology so far illustrated only takes into account the static properties of the transistor behavior. 17) have also been introduced in the model. Both gate-source and gate-drain capacitors consist of 6 723*$7( &RYHUODS7* *HQF 6 &RYHUODS a &FK7* *$7( &RYHUODS7* ' &FK *$7( &RYHUODS *HQF b 723*$7( Fig. 2 Measurements and Characterization 41 a constant component Coverlap due to the overlap between gate and contact fingers (much larger than in self-aligned silicon technologies), and of a variable component depending on the channel accumulation state.

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