Download Charged Semiconductor Defects: Structure, Thermodynamics and by Edmund G. Seebauer, Meredith C. Kratzer PDF

By Edmund G. Seebauer, Meredith C. Kratzer

The technologically priceless homes of an effective usually depend on the kinds and concentrations of the defects it includes. now not unusually, defects in semiconductors were studied for a few years, in lots of instances with a view in the direction of controlling their habit via quite a few sorts of "defect engineering." for instance, within the bulk, charging considerably impacts the whole focus of defects which are on hand to mediate phenomena equivalent to solid-state diffusion. floor defects play a big function in mediating floor mass shipping in the course of extreme temperature processing steps comparable to epitaxial movie deposition, diffusional smoothing in reflow, and nanostructure formation in reminiscence equipment fabrication.

Charged Semiconductor Defects details the present country of data in regards to the homes of the ionized defects that may have an effect on the habit of complex transistors, photo-active units, catalysts, and sensors.

Features:

  • Group IV, III-V, and oxide semiconductors;
  • Intrinsic and extrinsic defects; and,
  • Point defects, in addition to disorder pairs, complexes and clusters.

A an important reference for fabrics scientists, floor scientists, electric engineers, and solid-state physicists trying to procedure the subject of illness charging from an built-in chemical engineering standpoint. Researchers and commercial practitioners alike will locate its content material helpful for machine and procedure optimization.

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Additional info for Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion

Sample text

1997). 5 Defect Kinetics The rate expressions that govern the generation, destruction and clustering of point defects are important for predicting and interpreting transient behavior that commonly occurs during semiconductor processing as well as certain experimental techniques designed to detect defects. The following sections outline some basic principles of defect reaction kinetics, as well as the kinetics of defect charging. 1 Reactions Although rate expressions for defect reactions can be developed in the abstract, it is perhaps more instructive to set such a presentation in the context of a specific case to bring out the nuances of kinetic integration that typically characterize a reaction network of defects within a typical semiconductor.

5 Defect Kinetics The rate expressions that govern the generation, destruction and clustering of point defects are important for predicting and interpreting transient behavior that commonly occurs during semiconductor processing as well as certain experimental techniques designed to detect defects. The following sections outline some basic principles of defect reaction kinetics, as well as the kinetics of defect charging. 1 Reactions Although rate expressions for defect reactions can be developed in the abstract, it is perhaps more instructive to set such a presentation in the context of a specific case to bring out the nuances of kinetic integration that typically characterize a reaction network of defects within a typical semiconductor.

EPR is equally useful for defect clusters as it is for isolated point defects. For instance, investigations have shed light upon multi-vacancy, interstitial-antisite, and Frenkel pairs in SiC (Ilyin et al. 2007; von Bardeleben et al. 2000). The technique, based upon the absorption of electromagnetic waves in the microwave frequency domain, involves the creation of magnetic dipoles in crystals subjected to magnetic fields. G. C. Kratzer, Charged Semiconductor Defects, © Springer 2009 39 40 3 Experimental and Computational Characterization lattice structure are inferred from hyperfine interactions.

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