By Panagiotis Dimitrakis
This publication describes the elemental applied sciences and operation ideas of charge-trapping non-volatile stories. The authors clarify the machine physics of every gadget structure and supply a concrete description of the fabrics concerned in addition to the basic houses of the know-how. smooth fabric homes used as charge-trapping layers, for brand spanking new functions are introduced.
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Additional info for Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices
2001, 2003) Kurata et al. (2007), Bae et al. (2009) Compagnoni et al. (2008) Prall et al. (2010) Liu et al. (2009) Lee (2004) Mielke et al. (2006) Okuyama et al. (1998) Lee (2004), Mielke et al. (2006), Belgal et al. (2002) Wang et al. (2009) Kim (2010) Kurata et al. (2007), Bae et al. (2009), Tega et al. (2006) Prall et al. 7 47 Failure of Charge Trapping Flash (CTF) Memories in NAND The floating gate has dominated high density memories for the last ~30 years despite heavy research on charge trap memories.
Vt of the N-region becomes higher with electron trapping on the N-region and could shut off the NAND string conduction in the worst case The adjacent control gates are biased high at the pass voltage during read. This high pass voltage shifts the Vt of the focus cell negatively through CG to FG coupling. High programming voltage on the CG couples up the FG in the neighboring cells and causes program disturbance FG potential during programming is modulated by neighboring channel potential, causing programming speed variation in the all bit line architecture.
Prall et al. be effective as a charge trap layer, it needs to trap the electrons efficiently during programming which means the traps need to be shallow traps. This, however, conflicts with retention and lateral charge confinement, which prefer deep traps. Good NAND cell performance requires at least +6 V/À5 V program/erase window (Goda et al. 2012). Silicon nitride, being a dielectric typically has no free electrons that can be removed to achieve the negative NAND cell Vt. Negative cell Vt can be achieved only through hole injection, which either requires much higher erase electric fields or Barrier Engineered Tunnel dielectric (Lue et al.